isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.76 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY?.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

文件：108.21 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.0913 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

ST

意法半導(dǎo)體

N-CHANNEL 600V - 3.3ohm - 3A TO-220/TO-220FP PowerMeshII MOSFET

The PowerMESH II is the evolution of the first generation of MESH OVERLAY?.The layout refinements introduced greatly improve the Ron area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness.

文件：108.21 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.18 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電