isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.34 Kbytes 頁(yè)數(shù)：2 Pages

ISC

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N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

文件：107.93 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

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100 UIS and Rg tested

文件：436.04 Kbytes 頁(yè)數(shù)：6 Pages

TSC

臺(tái)灣半導(dǎo)體

N-CHANNEL 500V - 2.2ohm - 4A TO-220/TO-220FP PowerMeshII MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2

文件：107.93 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 2.

文件：244.35 Kbytes 頁(yè)數(shù)：8 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 500V - 1.3??- 3.7A DPAK/IPAK PowerMesh??I MOSFET

文件：190.52 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體