isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.05 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

文件：356.26 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Advanced planar process

文件：416.33 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?.The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS

文件：356.26 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 650 V (D-S) MOSFET

文件：1.08657 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead ing edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

文件：338.71 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體