isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) -RDS(on) = 0.165Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.3 Kbytes 頁(yè)數(shù)：2 Pages

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N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET? process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

文件：518.46 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

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絲印：18N60M2；Package：I2PAK；N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? 100 avalanche tested ? Zener-protected Application ? Switching applications ? LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh? M2

文件：861.3 Kbytes 頁(yè)數(shù)：27 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.285Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.37 Kbytes 頁(yè)數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.27Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：281.29 Kbytes 頁(yè)數(shù)：2 Pages

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N-channel 650 V - 0.25 廓 - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

文件：532.84 Kbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) -RDS(on) = 3.8mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.17 Kbytes 頁(yè)數(shù)：2 Pages

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絲?。?a target="_blank" title="Marking" href="/20n60m2ep/marking.html">20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh? M2 EP Power MOSFET in an I2PAK package

Features ? Extremely low gate charge ? Excellent output capacitance (COSS) profile ? Very low turn-off switching losses ? 100 avalanche tested ? Zener-protected Applications ? Switching applications ? Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：262.029 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

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N-channel 650 V, 0.160 廓 typ., 18 A MDmesh??V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

Features ■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100 avalanche tested Applications ■ Switching applications Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary ve

文件：1.17545 Mbytes 頁(yè)數(shù)：21 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/21n65m5/marking.html">21N65M5；Package：I2PAK；N-channel 650 V, 0.150 廓, 17 A MDmesh??V Power MOSFET D?PAK, TO-220FP, TO-220, I?PAK, TO-247

Description These devices are N-channel MDmesh? V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.43958 Mbytes 頁(yè)數(shù)：22 Pages

STMICROELECTRONICS

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