| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) -RDS(on) = 1.7mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:285.39 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/410n4f7/marking.html">410N4F7;Package:I2PAK;Automotive N-channel 40 V, 1.5 mΩ typ., 180 A STripFET? F7 Power MOSFET in an I2PAK package Features ? Designed for automotive applications ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel Power MOSFET utilizes STripFE 文件:666.39 Kbytes 頁(yè)數(shù):12 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 33A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 79mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:284.77 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-channel 650 V, 0.070 廓, 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh? V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic 文件:1.10111 Mbytes 頁(yè)數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
絲?。?a target="_blank" title="Marking" href="/i2pak/marking.html">I2PAK;Package:TO-262;isc N-Channel MOSFET Transistor FEATURES ? Drain Current –ID=33A@ TC=25℃ ? Drain Source Voltage- : VDSS= 650V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 79mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Switching appl 文件:357.93 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
絲?。?a target="_blank" title="Marking" href="/42n65m5/marking.html">42N65M5;Package:I2PAK;N-channel 650 V, 0.070 ?? 33 A MDmesh??V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Description MDmesh? V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silic 文件:1.10123 Mbytes 頁(yè)數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) -RDS(on) = 18mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:284.95 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | ||
N-channel 100 V, 0.0145 typ., 45 A, STripFET VII DeepGATE Power MOSFETs in DPAK, I2PAK and TO-220 packages Description These N-channel Power MOSFETs utilize STripFET? F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Features ? Among the lowest RDS(on) on 文件:1.17964 Mbytes 頁(yè)數(shù):19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
Automotive-grade N-channel 600 V, 70 m typ., 36 A MDmeshTM DM6 Power MOSFET in an I2PAK package Features ? AEC-Q101 qualified ? Fast-recovery body diode ? Lower RDS(on) per area vs previous generation ? Low gate charge, input capacitance and resistance ? 100 avalanche tested ? Extremely high dv/dt ruggedness ? Zener-protected Description This high-voltage N-channel Power MOSFET is 文件:452.26 Kbytes 頁(yè)數(shù):13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET Description These SuperMESH3? Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH? technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, renderi 文件:1.06158 Mbytes 頁(yè)數(shù):19 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
晶體管資料
- 型號(hào):
- 別名:
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家:
- 制作材料:
Si-NPN
- 性質(zhì):
- 封裝形式:
- 極限工作電壓:
100V
- 最大電流允許值:
1A
- 最大工作頻率:
<1MHZ或未知
- 引腳數(shù):
- 可代換的型號(hào):
3DG84D,
- 最大耗散功率:
1W
- 放大倍數(shù):
- 圖片代號(hào):
NO
- vtest:
100
- htest:
999900
- atest:
1
- wtest:
1
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
STI
- 制造商:
Eaton - Electronics Division
- 類別:
電路保護(hù) > 配件
- 系列:
HTB
- 包裝:
散裝
- 配件類型:
旋鈕
- 配套使用/相關(guān)產(chǎn)品:
HTB 系列
- 描述:
FUSE KNOB ASSEMBLY
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Eaton |
22+ |
NA |
168 |
加我QQ或微信咨詢更多詳細(xì)信息, |
詢價(jià) | ||
N/A |
2023+ |
NA |
1436 |
全新原裝正品,優(yōu)勢(shì)價(jià)格 |
詢價(jià) | ||
ST |
25+ |
BGA |
1630 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ST |
24+ |
QFP |
2000 |
詢價(jià) | |||
ST |
BGA |
1200 |
正品原裝--自家現(xiàn)貨-實(shí)單可談 |
詢價(jià) | |||
ADI |
22+ |
N/A |
60000 |
專注配單,只做原裝現(xiàn)貨 |
詢價(jià) | ||
SIGMATEL |
2023+ |
SSOP28 |
5800 |
進(jìn)口原裝,現(xiàn)貨熱賣 |
詢價(jià) | ||
ST |
25+23+ |
QFP160 |
36159 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) | ||
SUNTO |
20+ |
SOT23-5 |
25 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價(jià) | ||
ST |
25+ |
標(biāo)準(zhǔn)封裝 |
18000 |
原廠直接發(fā)貨進(jìn)口原裝 |
詢價(jià) |
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- TC1411COA
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- WRL-13745
- STK11C68-C35I
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相關(guān)庫(kù)存
更多- XRCGB25M000F3N00R0
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- VS-40HFR60M

