V-Band Full Waveguide Band Phase Noise Analyzer Down-Converter

FEATURES Full Band Coverage APPLICATIONS Frequency Extension Phase Noise Measurements Holzworth HA7062 Phase Noise Analyzers

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ERAVANT

絲?。?a target="_blank" title="Marking" href="/100n10f7/marking.html">100N10F7；Package：I2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description These N-channel Power MOSFETs utilize STripFET? F7 technology with an enhanced trenc

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STMICROELECTRONICS

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Single-chip worldwide iDTV processor

Description The STi1010 is a highly-integrated, high-performance system-on-chip iDTV processor compliant with worldwide digital TV standards such as ATSC (US), DVB (Europe), ARIB (Japan), DMB-TH (China) and PAL/SECAM/NTSC analog TV standards. The STi1010 provides a cost-optimized solution for iD

文件：134.9 Kbytes 頁數(shù)：5 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 8.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) -RDS(on) = 0.75Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：285.51 Kbytes 頁數(shù)：2 Pages

ISC

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絲?。?a target="_blank" title="Marking" href="/10nm60n/marking.html">10NM60N；Package：I2PAK；N-channel 600 V, 0.53 Ω typ.,10 A MDmesh? II Power MOSFET in I2PAK package

Features ? 100 avalanche tested ? Low input capacitance and gate charge ? Low gate input resistance Applications ? Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/i2pak/marking.html">I2PAK；Package：TO-262；isc N-Channel MOSFET Transistor

FEATURES ? Drain Current –ID= 6.3A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 0.45Ω (Max) ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Switching a

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ISC

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N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh? II Power MOSFET that belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/i11nm80/marking.html">I11NM80；Package：I2PAK；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Best RDS(on)*Qg in the industry Applications ■ Switching applications Description These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh? technology, which associates th

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 5.5mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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絲?。?a target="_blank" title="Marking" href="/i2pak/marking.html">I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

? FEATURES ? Drain Current ID= 8.5A@ TC=25℃ ? Drain Source Voltage- : VDSS=650V(Min) ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ? APPLICATIONS ? Switching applications

文件：341.97 Kbytes 頁數(shù)：2 Pages

ISC

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