Trench gate Field-Stop IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=1.55V@IC= 15A · High Current Capability · High Input Impedance · Low thermal resistance APPLICATIONS · Synchronous Rectification in SMPS · Motor Drives · UPS,PFC · General purpose inverter

文件：398.65 Kbytes 頁數(shù)：6 Pages

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絲?。?a target="_blank" title="Marking" href="/g20m65df2/marking.html">G20M65DF2；Package：TO-220FP；Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT

Features ? High short-circuit withstand time ? VCE(sat) = 1.55 V (typ.) @ IC = 20 A ? Tight parameter distribution ? Safer paralleling ? Low thermal resistance ? Soft and very fast recovery antiparallel diode Applications ? Motor control ? UPS ? PFC ? General-purpose inverters Desc

文件：531.31 Kbytes 頁數(shù)：16 Pages

STMICROELECTRONICS

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絲印：GF30H60DF；Package：TO-220FP；600 V, 30 A high speed trench gate field-stop IGBT

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：1.95033 Mbytes 頁數(shù)：24 Pages

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絲?。?a target="_blank" title="Marking" href="/gf30nc60s/marking.html">GF30NC60S；Package：TO-220FP；30 A, 600 V, fast IGBT

Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching ■ Low on-voltage drop (VCE(sat)) ■ High current capability Application Motor drive Description This device utilizes the advanced PowerMESH? process resulting in an excellent trade-off betw

文件：497.21 Kbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/gf3hf60hd/marking.html">GF3HF60HD；Package：TO-220FP；4.5 A, 600 V very fast IGBT with Ultrafast diode

Description These devices are based on a new advanced planar technology concept to yield an IGBT with more stable switching performance (Eoff) versus temperature, as well as lower conduction losses. Features ? Minimal tail current ? Low conduction and switching losses ? Ultrafast soft re

文件：1.32745 Mbytes 頁數(shù)：26 Pages

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N-CHANNEL 3A - 600V - TO-220/TO-220FP/DPAK/D2PAK PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH? IGBTs, with outstanding performances. The suffix “F” identifies a family optimized to achieve very low switching times for frequency a

文件：732.07 Kbytes 頁數(shù)：14 Pages

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Very fast IGBT

DESCRIPTION · High voltage capability · High Speed Switching & Low Power Loss · Very ultrafast recovery diode APPLICATIONS ? Home appliance ? Lighting

文件：295.26 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/gf3nc120hd/marking.html">GF3NC120HD；Package：TO-220FP；7 A, 1200 V very fast IGBT with ultrafast diode

Description This high voltage and very fast IGBT shows an excellent trade-off between low conduction losses and fast switching performance. It is designed in PowerMESH? technology combined with high voltage ultrafast diode. Features ■ High voltage capability ■ High speed ■ Very soft ult

文件：769.83 Kbytes 頁數(shù)：16 Pages

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絲印：GF5H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequen

文件：872.71 Kbytes 頁數(shù)：30 Pages

STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/gf7h60df/marking.html">GF7H60DF；Package：TO-220FP；Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(s

文件：985.08 Kbytes 頁數(shù)：25 Pages

STMICROELECTRONICS

意法半導(dǎo)體