N-channel 600 V - 0.56 廓 - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements second generation MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding h

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STMICROELECTRONICS

意法半導體

N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET

Description The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body

文件：727.53 Kbytes 頁數(shù)：17 Pages

STMICROELECTRONICS

意法半導體

Isc N-Channel MOSFET Transistor

文件：282.42 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Ultralow forward voltage drop

文件：240.97 Kbytes 頁數(shù)：8 Pages

SMC

桑德斯微電子

SCHOTTKY RECTIFIER

文件：152.67 Kbytes 頁數(shù)：7 Pages

SMC

桑德斯微電子

SCHOTTKY RECTIFIER

文件：152.64 Kbytes 頁數(shù)：7 Pages

SMC

桑德斯微電子

SCHOTTKY RECTIFIER

文件：152.36 Kbytes 頁數(shù)：7 Pages

SMC

桑德斯微電子

Dual N-Channel Enhancement Mode Field Effect Transistor

文件：91.78 Kbytes 頁數(shù)：7 Pages

SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

文件：109.5 Kbytes 頁數(shù)：6 Pages

SAMHOP

三合微科

SCHOTTKY RECTIFIER

文件：152.32 Kbytes 頁數(shù)：7 Pages

SMC

桑德斯微電子