Ultra low on-resistance

Description These devices utilize the 7th generation of design rules of ST’s proprietary STripFET? technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. ? Extremely low gate charge ? Ultra low on-resistance ? Low gate input resistance A

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STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/80n240k6/marking.html">80N240K6；Package：TO-220FP；N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220FP package

Features ? Worldwide best RDS(on) x area ? Worldwide best FOM (figure of merit) ? Ultra low gate charge ? 100% avalanche tested ? Zener-protected Applications ? Flyback converter ? Adapters for tablets, notebook and AIO ? LED lighting Description This very high voltage N-channel

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STMICROELECTRONICS

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SCHOTTKY RECTIFIER

? 150 'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MO

文件：1.04099 Mbytes 頁(yè)數(shù)：7 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150 'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：380.56 Kbytes 頁(yè)數(shù)：6 Pages

SMCDIODE

桑德斯微電子

SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Center tap configuration ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ?

文件：380.43 Kbytes 頁(yè)數(shù)：6 Pages

SMCDIODE

桑德斯微電子

PNP MEDIUM POWER TRANSISTORS

DECRIPTION The STF817 and STN817 are PNP transistors manufactured using Planar Technology resulting in rugged high performance devices. ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING APPLICATIONS ■ VOLTAGE REGULATION ■ RELAY DRIV

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STMICROELECTRONICS

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PNP MEDIUM POWER TRANSISTOR

Description The STF817A - STN817A are PNP transistor manufactured using Planar Technology resulting in rugged high performance devices. General features ■ SURFACE-MOUNTING DEVICES IN MEDIUM POWER SOT-223 AND SOT-89 PACKAGES ■ AVAILABLE IN TAPE & REEL PACKING Applications ■ VOLTAGE REGULA

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STMICROELECTRONICS

意法半導(dǎo)體

SCHOTTKY RECTIFIER

Features ? 150'C TJ operation ? Ultralow forward voltage drop ? High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? High frequency operation ? Guard ring for enhanced ruggedness and long term reliability ? Trench MOS Schottky technolo

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SMCDIODE

桑德斯微電子

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

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SAMHOP

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：95.4 Kbytes 頁(yè)數(shù)：6 Pages

SAMHOP

三合微科