首頁 >STF8NM60ND>規(guī)格書列表
| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STF8NM60ND | N-channel 600 V, 0.59 , 7 A, FDmesh II Power MOSFET Description The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body 文件:727.53 Kbytes 頁數(shù):17 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | |
STF8NM60ND | isc N-Channel MOSFET Transistor 文件:310.85 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
STF8NM60ND | N-channel 600 V, 0.59 Ω, 7 A, FDmesh?2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK The FDmesh? II series belongs to the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a new vertical structure to the company?s strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance; | ST 意法半導(dǎo)體 | ST | |
N-CHANNEL 650V Tjmax-0.9ohm-8A TO-220/FP/D/IPAK/D2PAK STripFET II MOSFET Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt 文件:489.18 Kbytes 頁數(shù):16 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh??Power MOSFET Description The MDmesh? is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH? horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt 文件:603.7 Kbytes 頁數(shù):13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 650 V@Tjmax, 0.9 廓, 8 A MDmesh??Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK 文件:561.24 Kbytes 頁數(shù):18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
詳細(xì)參數(shù)
- 型號(hào):
STF8NM60ND
- 功能描述:
MOSFET NCH 6V 7A FDMESH FDMesh
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TO220F |
18600 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
STM |
19+ |
700 |
TO-220FP-3 |
詢價(jià) | |||
ST/意法 |
17+ |
TO-220FP |
31518 |
原裝正品 可含稅交易 |
詢價(jià) | ||
ST/意法 |
2025+ |
TO-220FP-3 |
4000 |
原裝進(jìn)口價(jià)格優(yōu) 請(qǐng)找坤融電子! |
詢價(jià) | ||
ST(意法半導(dǎo)體) |
25+ |
N/A |
21000 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
ST/進(jìn)口原 |
17+ |
TO-220F |
6200 |
詢價(jià) | |||
ST |
2016+ |
TO-220F |
2980 |
公司只做原裝,假一罰十,可開17%增值稅發(fā)票! |
詢價(jià) | ||
ST |
18+ |
TO-220F |
41200 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
ST |
20+ |
TO-220F |
38560 |
原裝優(yōu)勢(shì)主營型號(hào)-可開原型號(hào)增稅票 |
詢價(jià) | ||
ST |
20+ |
568 |
全新現(xiàn)貨熱賣中歡迎查詢 |
詢價(jià) |
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