絲?。?a target="_blank" title="Marking" href="/d65nf06/marking.html">D65NF06；Package：DPAK；N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”? strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a

文件：335.78 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：111.2 Kbytes 頁(yè)數(shù)：8 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：117.93 Kbytes 頁(yè)數(shù)：10 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：117.94 Kbytes 頁(yè)數(shù)：10 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package

文件：117.59 Kbytes 頁(yè)數(shù)：10 Pages

SAMHOP

三合微科

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 ? ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROUG

文件：171.05 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Zener-protected

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high ef

文件：1.29122 Mbytes 頁(yè)數(shù)：26 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 1.25Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.57 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：272.04 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 400V - 0.75ohm - 5A - DPAK / IPAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

文件：272.04 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體