| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-channel 60V - 0.014ohm - 60A - DPAK Description This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a 文件：413.77 Kbytes 頁(yè)數(shù)：13 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET??II POWER MOSFET Description This application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives 文件：452.83 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-CHANNEL 55V - 0.012ohm - 60A DPAK STripFET??II POWER MOSFET Description This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable 文件：455.75 Kbytes 頁(yè)數(shù)：9 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size?” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark 文件：324.34 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-channel 55V - 0.012廓 - 60A - DPAK STripFET??II Power MOSFET Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size?” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remark 文件：324.34 Kbytes 頁(yè)數(shù)：14 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
N-Channel 60-V (D-S) MOSFET Features ? Vos =60V.lo =50A Ros 文件：2.13544 Mbytes 頁(yè)數(shù)：5 Pages | TECHPUBLIC 臺(tái)舟電子 | TECHPUBLIC | ||
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO 文件：42.76 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO 文件：122.61 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO 文件：122.61 Kbytes 頁(yè)數(shù)：6 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HIGH VOLTAGE NPN POWER TRANSISTOR DESCRIPTION The STD616A is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability. ■ REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES ■ HIGH VOLTAGE CAPABILITY ■ HIGH DC CURRENT GAIN ■ THROUGH-HO 文件：42.76 Kbytes 頁(yè)數(shù)：5 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- 型號(hào)：
STD6
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
57000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
DISCRETE |
2500 |
STM |
52500 |
詢價(jià) | |||
24+ |
N/A |
1380 |
詢價(jià) | ||||
st |
25+ |
to-252 |
2250 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ST |
17+ |
TO-252 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
ST |
24+ |
原廠原封 |
6523 |
進(jìn)口原裝公司百分百現(xiàn)貨可出樣品 |
詢價(jià) | ||
ST |
2016+ |
TO252 |
6000 |
公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
ST |
12+ |
TO-252 |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢價(jià) | ||
ST |
24+/25+ |
5000 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
ST |
24+ |
08+ |
3 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) |
相關(guān)規(guī)格書
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