絲?。?a target="_blank" title="Marking" href="/d35nf06l/marking.html">D35NF06L；Package：DPAK；N-channel 60 V, 0.014 Ω, 35 A STripFET? II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

文件：650.7 Kbytes 頁數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：319.96 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 60 V (D-S) MOSFET

文件：989.71 Kbytes 頁數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N-Channel 6 0-V (D-S) MOSFET

文件：897.22 Kbytes 頁數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

N溝道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，DPAK封裝

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? Low threshold drive \n? Gate charge minimized;

ST

意法半導(dǎo)體