N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET??I MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te

文件：431.99 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn

文件：1.2191 Mbytes 頁(yè)數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

文件：1.14427 Mbytes 頁(yè)數(shù)：6 Pages

EVVOSEMI

翊歐

N-channel 60 V, 0.014 Ω, 35 A STripFET? II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

文件：650.7 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET??I MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te

文件：431.99 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d35nf06l/marking.html">D35NF06L；Package：DPAK；N-channel 60 V, 0.014 Ω, 35 A STripFET? II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

文件：650.7 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-Channel 60 V (D-S) MOSFET

文件：989.71 Kbytes 頁(yè)數(shù)：7 Pages

VBSEMI

微碧半導(dǎo)體

N溝道60 V、0.014 Ohm典型值、35 A STripFET II功率MOSFET，DPAK封裝

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu ? Low threshold drive \n? Gate charge minimized;

ST

意法半導(dǎo)體