N-channel 60V - 0.018廓 - 35A - DPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

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STMICROELECTRONICS

意法半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn

文件：1.2191 Mbytes 頁(yè)數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

文件：1.14427 Mbytes 頁(yè)數(shù)：6 Pages

EVVOSEMI

翊歐

N-Channel MOSFET uses advanced trench technology

文件：887.28 Kbytes 頁(yè)數(shù)：4 Pages

DOINGTER

杜因特

N溝道60V - 0.018Ohm - 35A - DPAK StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"Single Feature Size?\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma ? Exceptional dv/dt capability \n? 100% avalanche tested \n? Application oriented characterization;

ST

意法半導(dǎo)體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Tec

文件：1.14427 Mbytes 頁(yè)數(shù)：6 Pages

EVVOSEMI

翊歐

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD35NF06 uses advanced trench technology and design to provide excellent RDS(ON) wi th low ga te cha rg e. It ca n be used in a wide variety of applications. Features VDS = 60V,ID =35A RDS(ON),20mΩ(Typ) @ VGS =10V RDS(ON),16mΩ(Typ) @ VGS =4.5V Advanced Trench Techn

文件：1.2191 Mbytes 頁(yè)數(shù)：6 Pages

UMW

友臺(tái)半導(dǎo)體

N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET??I MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te

文件：431.99 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-channel 60 V, 0.014 Ω, 35 A STripFET? II Power MOSFET in a DPAK package

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters

文件：650.7 Kbytes 頁(yè)數(shù)：14 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET??I MOSFET

Description This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for te

文件：431.99 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體