isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 24A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 40mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

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ISC

無錫固電

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

意法半導體

60V N-Channel Enhancement ModePowerMOSFET

General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technolo

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UMW

友臺半導體

60V N-Channel Enhancement Mode Power MOSFET

General Description The STD20NF06L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =30A RDS(ON),25mΩ(Typ) @ VGS =10V RDS(ON),30mΩ(Typ) @ VGS =4.5V Advanced Trench Technol

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EVVOSEMI

翊歐

N-channel 60V - 0.032OHM - 24A - DPAK - IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：416.49 Kbytes 頁數：14 Pages

STMICROELECTRONICS

意法半導體

絲?。?a target="_blank" title="Marking" href="/d20nf06l/marking.html">D20NF06L；Package：DPAK；Automotive-grade N-channel 60 V, 32 mΩ typ., 24 A, STripFET II Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? Exceptional dv/dt capability ? 100 avalanche tested ? Low gate charge Applications ? Switching applications Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize in

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STMICROELECTRONICS

意法半導體

N-channel 60V - 0.032廓 - 24A - DPAK - IPAK STripFET??II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

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STMICROELECTRONICS

意法半導體

N-Channel 60 V (D-S) MOSFET

文件：963.83 Kbytes 頁數：7 Pages

VBSEMI

微碧半導體

N-Channel 60-V (D-S) MOSFET

文件：899.01 Kbytes 頁數：6 Pages

VBSEMI

微碧半導體

N溝道60V - 0.032 - 24A STripFET? II MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size?” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufactu ? Exceptional dv/dt capability \n? Application oriented characterization \n? 100% avalanche tested;

ST

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