isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 70A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.023Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：313.9 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.018 Ω (Typ.)

文件：262.38 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：650.92 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：650.92 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 25μA (Max.) @ VDS= 900V ? Lower RDS(ON): 1.247?(Typ.)

文件：246.12 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

N-CHANNEL POWER MOSFET

FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 25μA (Max.) @ VDS= 800V ? Lower RDS(ON): 1.000?(Typ.)

文件：249.82 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

Advanced Power MOSFET

BVDSS = 800 V RDS(on) = 1.3 ? ID = 9 A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 μA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 ? (Typ.)

文件：251.2 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

Built-in Photomicrosensor Connector Type

Features Models available Power supply voltage: In addition to the conventional 5 VDC supply, model also available with 24 VDC supply best for large devices Downsizing Smallest class in the industry *: Downsizing of products with unique optical elements is realized * As of August 2018,

文件：3.31662 Mbytes 頁數(shù)：9 Pages

OMRON

歐姆龍

1.25 mm pitch/Disconnectable Crimp style connectors

Developed for PDP, LCD or small electronics equipment. This low insertion force type connector realizes easier mating operation. The basic concept of the contact part of this connector is equivalent to the performance proven SHL connector.

文件：842.08 Kbytes 頁數(shù)：5 Pages

JST

JST集團(tuán)

NSH CONNECTOR 1.0 mm pitch/Disconnectable Crimp style connectors

1.0 mm pitch secure lock type connector. This low insertion force type connector realizes easier mating operation. The basic concept of the contact part of this connector is equivalent to the performance proven SHL connector. ● Secure locking structure ● Contact lock structure ● Prevention

文件：638.01 Kbytes 頁數(shù)：4 Pages

JST

JST集團(tuán)