| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SSH | Output to 75A, 510 Vac with Diagnostics 文件：859.85 Kbytes 頁數(shù)：5 Pages | TELEDYNE 華特力科 | TELEDYNE | |
SSH | Aluminum Electrolytic Capacitors 文件：285.62 Kbytes 頁數(shù)：2 Pages | MERITEK | MERITEK | |
Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 μA(Max.) @ VDS = 600V ■ Low RDS(ON) : 0.646 Ω(Typ.) 文件：243.68 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary,planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig 文件：680.5 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
Advanced Power MOSFET FEATURES ?Avalanche Rugged Technology ?Rugged Gate Oxide Technology ?Lower Input Capacitance ?Improved Gate Charge ?Extended Safe Operating Area ?Lower Leakage Current: 10μA (Max.) @ VDS= 500V ?Lower RDS(ON): 0.197?(Typ.) 文件：232.9 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
Advanced Power MOSFET FEATURES ?Avalanche Rugged Technology ?Rugged Gate Oxide Technology ?Lower Input Capacitance ?Improved Gate Charge ?Extended Safe Operating Area ?Lower Leakage Current: 10μA (Max.) @ VDS= 500V ?Lower RDS(ON): 0.197?(Typ.) 文件：232.9 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：681.71 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10? (Max.) @ VDS = 200V Low RDS(ON) : 0.054?(Typ.) 文件：258.85 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：681.71 Kbytes 頁數(shù)：8 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD | ||
Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.018 Ω (Typ.) 文件：262.38 Kbytes 頁數(shù)：7 Pages | FAIRCHILD 仙童半導體 | FAIRCHILD |
技術參數(shù)
- 線規(guī) - AWG：
28~32
- 線規(guī) - mm2：
0.032~0.08
- 觸頭材料：
磷青銅
- 觸頭鍍層：
金
- 認證：
UL
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SEC |
25+ |
管3P |
18000 |
原廠直接發(fā)貨進口原裝 |
詢價 | ||
FAIRCHILD |
24+ |
TO-3P-3 |
8866 |
詢價 | |||
SAM |
24+ |
原廠封裝 |
8060 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
FSC |
25+ |
TO-247 |
56 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
FSC |
23+ |
TO-3P |
20000 |
原裝正品,假一罰十 |
詢價 | ||
FSC |
17+ |
TO-3P |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
JST |
16+ |
NA |
8800 |
原裝現(xiàn)貨,貨真價優(yōu) |
詢價 | ||
SMG |
24+ |
TO-3P |
6868 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 | ||
MOT |
24+ |
BGA |
6232 |
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存! |
詢價 | ||
仙童 |
06+ |
TO-247 |
3200 |
原裝 |
詢價 |
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