N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET FEATURES ? Avalanche Rugged Technology ? Rugged Gate Oxide Technology ? Lower Input Capacitance ? Improved Gate Charge ? Extended Safe Operating Area ? Lower Leakage Current: 25μA (Max.) @ VDS= 900V ? Lower RDS(ON): 1.247?(Typ.)

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

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ISC

無(wú)錫固電

N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFETFEATURES\n? Avalanche Rugged Technology\n? Rugged Gate Oxide Technology\n? Lower Input Capacitance\n? Improved Gate Charge\n? Extended Safe Operating Area\n? Lower Leakage Current: 25μA (Max.) @ VDS= 900V\n? Lower RDS(ON): 1.247?(Typ.) ? Avalanche Rugged Technology\n? Rugged Gate Oxide Technology\n? Lower Input Capacitance\n? Improved Gate Charge\n? Extended Safe Operating Area\n? Lower Leakage Current: 25μA (Max.) @ VDS= 900V\n? Lower RDS(ON): 1.247?(Typ.);

ONSEMI

安森美半導(dǎo)體

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

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SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is

文件：510.23 Kbytes 頁(yè)數(shù)：7 Pages

SEMIPOWER

芯派科技

900V N-Channel Power MOSFET

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TSC

臺(tái)灣半導(dǎo)體