| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>SPD；Package：SOT-23F；MOSFETs Silicon P-Channel MOS 文件：379.29 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
SPD | Over Voltage & Under Voltage Cut-Off With Surge Protection Device OVCD Features ? Extends The Life Of Your Fixture By Eliminating Temporary Over/Under Voltages that Can Harm Sensitive Electronic Components ? Over 6,000 Operations Per Product Lifetime ? Safe Restore? -30 Second Delay on Power-Up -Instant Drop on Over/Under Voltage Condition -30 Second Del 文件：234.05 Kbytes 頁數(shù)：1 Pages | ABLEPOWERPRODUCTS | ABLEPOWERPRODUCTS | |
SPD | 20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER Features: ? Fast Recovery: 120 nsec maximum ? Low Reverse Leakage Current ? Single Chip Construction ? PIV to 400V ? Hermetically Sealed ? High Surge Rating ? Low Thermal Resistance ? Higher Voltage Devices Available–Contact Factory ? For Reverse Polarity Add Suffix “R” ? Replacement for 文件：75.77 Kbytes 頁數(shù)：2 Pages | SSDI | SSDI | |
SPD | C to Ku Band Mixer, Detector, Modulator Applications Features ? Very small-sized ceramic package ? Less parasitic components, conversion loss ? Many types : 5 single types, 10 integrated types 文件：57.78 Kbytes 頁數(shù)：2 Pages | SANYO 三洋 | SANYO | |
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target applications 文件：910.3 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target applications 文件：279.9 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08866 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.07867 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel MOSFET Transistor ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.21 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance 文件：267.56 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
20+ |
SOT-23F |
43000 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
TOSHIBA(東芝) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗(yàn)原裝進(jìn)口正品做服務(wù)做口碑有支持 |
詢價(jià) | ||
TOSHIBA/東芝 |
23+ |
SOT-23F |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
TOSHIBA/東芝 |
25+ |
SOT-23F |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
TOSHIBA/東芝 |
24+ |
SOT-23F |
60000 |
詢價(jià) | |||
TOSHIBA/東芝 |
2511 |
SOT-23F |
360000 |
電子元器件采購降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
TOSHIBA(東芝) |
25+ |
封裝 |
500000 |
源自原廠成本,高價(jià)回收工廠呆滯 |
詢價(jià) | ||
TOSHIBA/東芝 |
22+ |
SOT-23F |
20000 |
只做原裝 |
詢價(jià) | ||
TOSHIBA(東芝) |
2447 |
SOT-23F |
105000 |
3000個(gè)/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨, |
詢價(jià) | ||
TOSHIBA |
25+ |
SOT-23F |
3675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) |
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