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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          SI4435DY
          絲印：SI4435DY；30V P-Channel PowerTrench MOSFET
          
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications
·  Power management
·  Load sw
          文件：197.29 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          SI4435DY
          絲印：SI4435DY；30V P-Channel PowerTrench MOSFET
          
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications
·  Power management
·  Load sw
          文件：197.29 Kbytes 頁(yè)數(shù)：7 Pages
          ONSEMI
          安森美半導(dǎo)體
          

          SI4435DY
          30V P-Channel PowerTrench MOSFET
          
General Description
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Features
? –8.8 A, –30 V RDS(ON) = 20 mΩ @ VGS
          文件：93.27 Kbytes 頁(yè)數(shù)：5 Pages
          FAIRCHILD
          仙童半導(dǎo)體
          

          SI4435DY
          Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm
          
VDSS = -30V

RDS(on) = 0.020?


Description

These P-channel HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i
          文件：82.64 Kbytes 頁(yè)數(shù)：8 Pages
          IRF
          

          SI4435DY
          P-Channel MOSFET
          
■ Features
● VDS=-30V
● RDS(on)=0.02Ω @VGS=-10V
● RDS(on)=0.035Ω @VGS=-4.5V
          文件：490.75 Kbytes 頁(yè)數(shù)：2 Pages
          KEXIN
          科信電子
          

          SI4435DY-HF
          P-Channel MOSFET
          
■ Features
● VDS=-30V
● RDS(on)=0.02Ω @VGS=-10V
● RDS(on)=0.035Ω @VGS=-4.5V
● Pb?Free Package May be Available. The G?Suffix Denotes a
   Pb?Free Lead Finish
          文件：523.049 Kbytes 頁(yè)數(shù)：2 Pages
          KEXIN
          科信電子
          

          SI4435DYPBF
          HEXFET Power MOSFET
          
VDSS = -30V

RDS(on) = 0.020?


Description

These P-channel HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i
          文件：107.91 Kbytes 頁(yè)數(shù)：8 Pages
          IRF
          

          SI4435DY-T1-E3
          P-Channel 30-V (D-S) MOSFET
          
FEATURES
? Halogen-free According to IEC 61249-2-21 Definition
? TrenchFET? Power MOSFET
? 100  Rg Tested
APPLICATIONS
? Load Switch
? Battery Switch
          文件：1.00124 Mbytes 頁(yè)數(shù)：9 Pages
          VBSEMI
          微碧半導(dǎo)體
          

          SI4435DYTRPBF
          Ultra Low On-Resistance
          
VDSS = -30V

RDS(on) = 0.020?


Description

These P-channel HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use i
          文件：88.2 Kbytes 頁(yè)數(shù)：8 Pages
          IRF
          

          SI4435DYPBF
          Simple Drive Requirements
          文件：113.3 Kbytes 頁(yè)數(shù)：8 Pages
          IRF
          

          
            
          
		
        
          
            
          
                
          詳細(xì)參數(shù)
          
            
          
            
            
            	
          • 型號(hào)：
            SI4435DY
          • 功能描述：
            MOSFET 30V SinGLE P-Ch 
          • RoHS：
            否 
          • 制造商：
            STMicroelectronics 
          • 晶體管極性：
            N-Channel 
          • 汲極/源極擊穿電壓：
            650 V 
          • 閘/源擊穿電壓：
            25 V 
          • 漏極連續(xù)電流：
            130 A 電阻汲極/源極 
          • RDS（導(dǎo)通）：
            0.014 Ohms 
          • 配置：
            Single 
          • 安裝風(fēng)格：
            Through Hole 
          • 封裝/箱體：
            Max247 
          • 封裝：
            Tube 
          
            
          
        
          
            
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          更多SI4435DY供應(yīng)商
            更新時(shí)間2026-1-20 16:36:00
        
          
        
          
          
          
            
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