絲印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features ? Ultra-low IQ: 1 μA ? Reverse current protection ? Low ISHUTDOWN: 150 nA ? Input voltage range: 2.7 V to 30 V ? Supports 200-mA peak output ? 2% accuracy over temperature ? Available in fixed-output voltages: 1.2 V to 6.5 V ? Thermal shutdown and overcurrent protection ?

文件：2.12946 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?strong>SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features ? Ultra-low IQ: 1 μA ? Reverse current protection ? Low ISHUTDOWN: 150 nA ? Input voltage range: 2.7 V to 30 V ? Supports 200-mA peak output ? 2% accuracy over temperature ? Available in fixed-output voltages: 1.2 V to 6.5 V ? Thermal shutdown and overcurrent protection ?

文件：2.12946 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?strong>SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關(guān)A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 頁數(shù)：36 Pages

TI

德州儀器

絲印：SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關(guān)A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?strong>SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關(guān)A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 頁數(shù)：36 Pages

TI

德州儀器

絲?。?strong>SIC；Package：SOT-23；TPS709 150-mA, 30-V, 1-關(guān)A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 頁數(shù)：39 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sic1mo120g0025/marking.html">SIC1MO120G0025；Package：TO-247-4L；1200 V, 25 mOhm N-Channel SiC MOSFET

Features ? Optimized for high-frequency, high-efficiency applications ? Extremely low gate charge and output capacitance ? Low gate resistance for high-frequency switching ? Normally-off operations at all temperatures ? Ultra-low on-resistance ? Optimized package with separate driver source

文件：415.04 Kbytes 頁數(shù)：10 Pages

LITTELFUSE

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絲?。?a target="_blank" title="Marking" href="/sic1mo120g0120/marking.html">SIC1MO120G0120；Package：TO-247-4L；1200 V, 120 mOhm N-Channel SiC MOSFET

Features ? Optimized for high-frequency, high-efficiency applications ? Extremely low gate charge and output capacitance ? Low gate resistance for high-frequency switching ? Normally-off operations at all temperatures ? Ultra-low on-resistance ? Optimized package with separate driver source

文件：528.61 Kbytes 頁數(shù)：10 Pages

LITTELFUSE

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絲?。?a target="_blank" title="Marking" href="/sic1mo170e0750/marking.html">SIC1MO170E0750；Package：TO-247-3L；1700 V, 750 mOhm N-Channel SiC MOSFET

Features ? Optimized for high-frequency, high-efficiency applications ? Extremely low gate charge and output capacitance ? Low gate resistance for high-frequency switching ? Normally-off operations at all temperatures Ultra-low on-resistance Applications ? High-frequency applications ? S

文件：515.2 Kbytes 頁數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/sic2sd065a10/marking.html">SIC2SD065A10；Package：TO-220-2L；LSIC2SD065A10A 650 V, 10 A SiC Schottky Barrier Diode

Description This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal m

文件：646.9 Kbytes 頁數(shù)：5 Pages

LITTELFUSE

力特