| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/ds120030g3/marking.html">DS120030G3；Package：TO-247-3L；3rd Generation 1200V/30A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.19612 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲印：DS120030H3；Package：TO-247-2L；3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.13833 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
5th Generation 1200V/30A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant 文件：658 Kbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
3rd Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：856.78 Kbytes 頁數(shù)：7 Pages | SANAN 三安光電 | SANAN | ||
絲印：DS120040G3；Package：TO-247-3L；3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.19742 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds120040h3/marking.html">DS120040H3；Package：TO-247-2L；3rd Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.23794 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds120040h5/marking.html">DS120040H5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant 文件：599.39 Kbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds120040j5/marking.html">DS120040J5；Package：TO-247-2L；5th Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant 文件：591.48 Kbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN | ||
3rd Generation 1200V/50A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Car bide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：854.74 Kbytes 頁數(shù)：7 Pages | SANAN 三安光電 | SANAN | ||
絲?。?a target="_blank" title="Marking" href="/ds120050h3/marking.html">DS120050H3；Package：TO-247-2L；3rd Generation 1200V/50A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.22875 Mbytes 頁數(shù)：9 Pages | SANAN 三安光電 | SANAN |
技術(shù)參數(shù)
- VRM [V]：
85
- VR [V]：
80
- IFM [mA]：
300
- IO[mA]：
100
- VF [V]_Max.：
1.2
- VF [V]@IF [mA]：
100
- IR [uA]_Max.：
0.5
- IR [uA]_VR [V]：
80
- trr [ns]_Max.：
4
- trr [ns]_VR [V]：
6
- trr [ns]@IF [mA]：
10
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
AUK |
24+ |
SOT323 |
9700 |
絕對原裝正品現(xiàn)貨假一罰十 |
詢價 | ||
AUK |
2016+ |
SOT-323 |
3000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
原裝AUK |
19+ |
SOT-323 |
20000 |
詢價 | |||
AUK |
2447 |
SOT-323 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
AUK |
23+ |
SOT323 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
AUK |
25+ |
SOT-323 |
10000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
AUK |
00+ |
SOT-323 |
3000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
AUK |
2023+ |
SOT-323 |
181500 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價 | ||
AUK |
23+ |
SOT323 |
8560 |
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣! |
詢價 | ||
AUK |
24+ |
NA |
990000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
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