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首頁(yè) >SDS1>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
SDS120J005B3	文件：735.55 Kbytes Page：7 Pages	3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：735.55 Kbytes 頁(yè)數(shù)：7 Pages	SANAN 三安光電	SANAN
SDS120J005C3	文件：1.18145 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120005c3/marking.html">DS120005C3；Package：TO-220-2L；3 rd Generation 1200V 5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.18145 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J005D3	文件：1.1397 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120005d3/marking.html">DS120005D3；Package：TO-252-2L；3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.1397 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010B3	文件：857.45 Kbytes Page：7 Pages	3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：857.45 Kbytes 頁(yè)數(shù)：7 Pages	SANAN 三安光電	SANAN
SDS120J010C3	文件：1.23812 Mbytes Page：9 Pages	絲印：DS120010C3；Package：TO-220-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.23812 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010C5	文件：590.04 Kbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120010c5/marking.html">DS120010C5；Package：TO-220-2L；5th Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant 文件：590.04 Kbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010D3	文件：1.19501 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120010d3/marking.html">DS120010D3；Package：TO-252-2L；3rd Generation 1200V/10 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.19501 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010E3	文件：1.21086 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds120010e3/marking.html">DS120010E3；Package：TO-263-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.21086 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010G3	文件：1.19524 Mbytes Page：9 Pages	絲印：DS120010G3；Package：TO-247-3L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.19524 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN
SDS120J010H3	文件：1.23954 Mbytes Page：9 Pages	絲?。?a target="_blank" title="Marking" href="/ds12000h3/marking.html">DS12000H3；Package：TO-247-2L；3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant 文件：1.23954 Mbytes 頁(yè)數(shù)：9 Pages	SANAN 三安光電	SANAN

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技術(shù)參數(shù)

VRM [V]：
85
VR [V]：
80
IFM [mA]：
300
IO[mA]：
100
VF [V]_Max.：
1.2
VF [V]@IF [mA]：
100
IR [uA]_Max.：
0.5
IR [uA]_VR [V]：
80
trr [ns]_Max.：
4
trr [ns]_VR [V]：
6
trr [ns]@IF [mA]：
10

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
瀚佳科技(深圳)有限公司	SDS142WAF	AUK	24+	SOT323	9700	絕對(duì)原裝正品現(xiàn)貨假一罰十	詢價(jià)
深圳市凌旭科技有限公司	SDS142WAF	AUK	2016+	SOT-323	3000	只做原裝,假一罰十,公司可開17%增值稅發(fā)票!	詢價(jià)
深圳誠(chéng)思涵科技有限公司	SDS142WAF	原裝AUK	19+	SOT-323	20000		詢價(jià)
艾睿（深圳）半導(dǎo)體有限公司	SDS142WAF	AUK	2447	SOT-323	100500	一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	SDS142WAF	AUK	23+	SOT323	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	SDS142WAF	AUK	25+	SOT-323	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市威雅利發(fā)展有限公司	SDS142WAF	AUK	00+	SOT-323	3000	一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價(jià)
深圳市億聯(lián)芯電子科技有限公司	SDS142WAF	AUK	2023+	SOT-323	181500	一級(jí)代理優(yōu)勢(shì)現(xiàn)貨,全新正品直營(yíng)店	詢價(jià)
深圳市華來深電子有限公司	SDS142WAF	AUK	23+	SOT323	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市明嘉萊科技有限公司	SDS142WAF	AUK	24+	NA	990000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)

更多SDS1供應(yīng)商更新時(shí)間2026-1-20 14:14:00

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