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          首頁 >SDS1>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          SDS120J015B3

          3rd Generation 1200V/15A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:738.37 Kbytes 頁數(shù):7 Pages

          SANAN

          三安光電

          SDS120J015C3

          絲?。?a target="_blank" title="Marking" href="/ds120015c3/marking.html">DS120015C3;Package:TO-220-2L;3rd Generation 1200V/15A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:1.1837 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J015H3

          絲?。?a target="_blank" title="Marking" href="/ds120015h3/marking.html">DS120015H3;Package:TO-247-2L;3rd Generation 1200V/15A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:1.18174 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J015H5

          絲?。?a target="_blank" title="Marking" href="/ds120015h5/marking.html">DS120015H5;Package:TO-247-2L;5th Generation 1200V/15A SiC Schottky Barrier Diode

          Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

          文件:593.91 Kbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J020B3

          3rd Generation 1200V/20A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery H igh speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:740.51 Kbytes 頁數(shù):7 Pages

          SANAN

          三安光電

          SDS120J020G3

          絲印:DS120020G3;Package:TO-247-3L;3rd Generation 1200V/20A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:1.25686 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J020H3

          絲印:DS120020H3;Package:TO-247-2L;3rd Generation 1200V/20A SiC Schottky Barrier Diode

          Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant

          文件:1.0663 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J020H5

          絲?。?a target="_blank" title="Marking" href="/ds120020h5/marking.html">DS120020H5;Package:TO-247-2L;5th Generation 1200V/20A SiC Schottky Barrier Diode

          Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

          文件:641.37 Kbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J027H3

          3rd Generation 1200V/2 7 A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:1.18165 Mbytes 頁數(shù):9 Pages

          SANAN

          三安光電

          SDS120J030B3

          3rd Generation 120 0 V/ 3 0 A SiC Schottky Barrier Diode

          Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

          文件:745.46 Kbytes 頁數(shù):7 Pages

          SANAN

          三安光電

          技術(shù)參數(shù)

          • VRM [V]:

            85

          • VR [V]:

            80

          • IFM [mA]:

            300

          • IO[mA]:

            100

          • VF [V]_Max.:

            1.2

          • VF [V]@IF [mA]:

            100

          • IR [uA]_Max.:

            0.5

          • IR [uA]_VR [V]:

            80

          • trr [ns]_Max.:

            4

          • trr [ns]_VR [V]:

            6

          • trr [ns]@IF [mA]:

            10

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          更多SDS1供應(yīng)商 更新時(shí)間2026-1-19 17:07:00
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