絲?。?strong>SC3；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET

Features ? Advanced Trench Process Technology ? Specially Designed for Switch Load, PWM Application, etc. ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：521.12 Kbytes 頁數(shù)：9 Pages

PANJIT

強茂

絲?。?strong>SC3；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET

Features ? Advanced Trench Process Technology ? Specially Designed for Switch Load, PWM Application, etc. ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：521.12 Kbytes 頁數(shù)：9 Pages

PANJIT

強茂

絲印：SC3；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET

Features ? Advanced Trench Process Technology ? Specially Designed for Switch Load, PWM Application, etc. ? AEC-Q101 qualified ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：481.93 Kbytes 頁數(shù)：9 Pages

PANJIT

強茂

絲印：SC32SEP；Package：TSSOP；SN54SC4T32-SEP Radiation Tolerant, Quadruple 2-Input Positive-OR Gates With Integrated Translation

1 Features ? Vendor item drawing available, VID V62/23629-01XE ? Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) ? Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.81373 Mbytes 頁數(shù)：24 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sc373sep/marking.html">SC373SEP；Package：TSSOP；SN54SC8T373-SEP Radiation Tolerant Octal Transparent D-Type Latches with 3-State Outputs

1 Features ? Vendor item drawing available, VID V62/25626-01XE ? Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) ? Radiation - Single-Even

文件：1.16673 Mbytes 頁數(shù)：28 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sc374sep/marking.html">SC374SEP；Package：TSSOP；SN54SC8T374-SEP Radiation Tolerant Octal Edge-Triggered D-Type Flip-Flops with 3-State Outputs

1 Features ? Vendor item drawing available, VID V62/25627-01XE ? Radiation - Total Ionizing Dose (TID): – TID characterized up to 50krad(Si) – TID performance assurance up to 30krad(Si) – Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si) ? Radiation - Single-Even

文件：1.14688 Mbytes 頁數(shù)：29 Pages

TI

德州儀器

絲?。?a target="_blank" title="Marking" href="/sc3100/marking.html">SC3100；Package：DO-214AB；3A, 100V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse

文件：433.12 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sc340/marking.html">SC340；Package：DO-214AB；3A, 40V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：433.06 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sc360/marking.html">SC360；Package：DO-214AB；3A, 60V Schottky Barrier Surface Mount Rectifier

FEATURES AEC-Q101 qualified Low power loss, high efficiency Ideal for automated placement High surge current capability Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free APPLICATIONS Low voltage, high frequency DC/DC converter Freewheeling diodes Reverse ba

文件：433.15 Kbytes 頁數(shù)：6 Pages

TSC

臺灣半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/sc31h12cwy/marking.html">SC31H12CWY；Package：TO-247；2 X 15 A, 1200 V power Schottky silicon carbide diode

Features ? AEC-Q101 qualified ? No or negligible reverse recovery ? Switching behavior independent of temperature ? Robust high-voltage periphery ? PPAP capable ? Operating Tj from -40 °C to 175 °C ? ECOPACK 2 compliant Applications ? OBC (on board battery chargers) ? PHEV - EV charging

文件：216.63 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體