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          LD56100DPU30R
          絲?。?strong>S30；1 A very low dropout fast transient ultra-low noise linear regulator
          
Description
The LD56100 high accuracy voltage regulator provides 1 A of current from an input
voltage ranging from 1.8 V to 5.5 V, with a typical dropout voltage of 120 mV.
It is available in DFN8 (1.2 x 1.6 mm) package, allowing the maximum space saving.
The device is stabilized with a cerami
          文件：1.5688 Mbytes 頁數(shù)：22 Pages
          STMICROELECTRONICS
          意法半導(dǎo)體
          

          BTS3011TE
          絲印：S3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch
          
Features
? Single channel device
? Digital Feedback
? Current limitation trigger concept
? 3.3 and 5 V compatible logic inputs
? Electrostatic discharge protection (ESD)
? Green Product (RoHS compliant)
? AEC Qualified
          文件：2.01443 Mbytes 頁數(shù)：43 Pages
          INFINEON
          英飛凌
          

          BTS3050EJ
          絲?。?a target="_blank" title="Marking" href="/s3050ej/marking.html">S3050EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch
          
Basic Features
? Single channel device
? Very low output leakage current in OFF state
? Electrostatic discharge protection (ESD)
? Embedded protection functions (see below)
? ELV compliant package
? Green Product (RoHS compliant)
? AEC Qualified
          文件：1.31322 Mbytes 頁數(shù)：45 Pages
          INFINEON
          英飛凌
          

          PBSS301NZ
          絲?。?a target="_blank" title="Marking" href="/s301nz/marking.html">S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor
          
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
          文件：286.12 Kbytes 頁數(shù)：15 Pages
          NEXPERIA
          安世
          

          PBSS301PZ
          絲?。?a target="_blank" title="Marking" href="/s301pz/marking.html">S301PZ；Package：SC-73；12 V, 5.7 A PNP low VCEsat (BISS) transistor
          
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
          文件：285.22 Kbytes 頁數(shù)：15 Pages
          NEXPERIA
          安世
          

          PBSS302NZ
          絲印：S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor
          
1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS302PZ

2. Features and benefits
? Low collector-emitter saturation voltage VCEsat
? High collector current capability IC and ICM
? High collector cur
          文件：271.98 Kbytes 頁數(shù)：13 Pages
          NEXPERIA
          安世
          

          PBSS302NZ-Q
          絲?。?a target="_blank" title="Marking" href="/s302nz/marking.html">S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor
          
1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.

2. Features and benefits
? Low collector-emitter saturation voltage VCEsat
? High collector current capability IC and ICM
? High collector current gain (hFE) at high IC

          文件：271.57 Kbytes 頁數(shù)：13 Pages
          NEXPERIA
          安世
          

          PBSS302PZ
          絲?。?a target="_blank" title="Marking" href="/s302pz/marking.html">S302PZ；Package：SC-73；20 V, 5.5 A PNP low VCEsat (BISS) transistor
          
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
          文件：285.71 Kbytes 頁數(shù)：15 Pages
          NEXPERIA
          安世
          

          PBSS302PZ-Q
          絲?。?a target="_blank" title="Marking" href="/s302pz/marking.html">S302PZ；Package：SOT223；20 V, 5.5 A PNP low VCEsat transistor
          
1. General description
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBSS302NZ-Q

2. Features and benefits
? Low collector-emitter saturation voltage VCEsat
? High collector current capability IC and ICM
? High collector c
          文件：273.07 Kbytes 頁數(shù)：14 Pages
          NEXPERIA
          安世
          

          PBSS303NZ
          絲印：S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat (BISS) transistor
          
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
          文件：286.04 Kbytes 頁數(shù)：15 Pages
          NEXPERIA
          安世
          

          
            
          
		
          
            
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          STMicroelectronics
          		

          25+
          		

          N/A
          		

          18798
          		

          正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          23+
          		

          DFN-8
          		

          6900
          		

          全新原裝正品現(xiàn)貨,支持訂貨
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          2021+
          		

          DFN-8
          		

          6900
          		

          原廠原裝,假一罰十
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          24+
          		

          DFN-8
          		

          30000
          		

          原裝正品公司現(xiàn)貨,假一賠十!
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          24+
          		

          DFN-8
          		

          6000
          		

          全新原裝深圳倉庫現(xiàn)貨有單必成
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          2022+
          		

          DFN-8
          		

          6900
          		

          原廠原裝,假一罰十
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          21+
          		

          DFN-8
          		

          8080
          		

          只做原裝,質(zhì)量保證
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          25+
          		

          DFN-8
          		

          8880
          		

          原裝認(rèn)準(zhǔn)芯澤盛世！
          		
詢價(jià)
          

          



          ST/意法半導(dǎo)體
          		

          2021+
          		

          DFN-8
          		

          4000
          		

          只做原裝，可提供樣品
          		
詢價(jià)
          

          



          STMICROELECTRONICS
          		

          2022+
          		

          原廠原包裝
          		

          8600
          		

          全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷
          		
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            更新時(shí)間2026-1-19 16:12:00
        
          
        
          
          
          
            
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