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    LD56100DPU30R
    絲?。?strong>S30；1 A very low dropout fast transient ultra-low noise linear regulator
    
Description
The LD56100 high accuracy voltage regulator provides 1 A of current from an input
voltage ranging from 1.8 V to 5.5 V, with a typical dropout voltage of 120 mV.
It is available in DFN8 (1.2 x 1.6 mm) package, allowing the maximum space saving.
The device is stabilized with a cerami
    文件：1.5688 Mbytes 頁(yè)數(shù)：22 Pages
    STMICROELECTRONICS
    意法半導(dǎo)體
    

    BTS3011TE
    絲?。?a target="_blank" title="Marking" href="/s3011te/marking.html">S3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch
    
Features
? Single channel device
? Digital Feedback
? Current limitation trigger concept
? 3.3 and 5 V compatible logic inputs
? Electrostatic discharge protection (ESD)
? Green Product (RoHS compliant)
? AEC Qualified
    文件：2.01443 Mbytes 頁(yè)數(shù)：43 Pages
    INFINEON
    英飛凌
    

    BTS3050EJ
    絲?。?a target="_blank" title="Marking" href="/s3050ej/marking.html">S3050EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch
    
Basic Features
? Single channel device
? Very low output leakage current in OFF state
? Electrostatic discharge protection (ESD)
? Embedded protection functions (see below)
? ELV compliant package
? Green Product (RoHS compliant)
? AEC Qualified
    文件：1.31322 Mbytes 頁(yè)數(shù)：45 Pages
    INFINEON
    英飛凌
    

    PBSS301NZ
    絲?。?a target="_blank" title="Marking" href="/s301nz/marking.html">S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor
    
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
    文件：286.12 Kbytes 頁(yè)數(shù)：15 Pages
    NEXPERIA
    安世
    

    PBSS301PZ
    絲印：S301PZ；Package：SC-73；12 V, 5.7 A PNP low VCEsat (BISS) transistor
    
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
    文件：285.22 Kbytes 頁(yè)數(shù)：15 Pages
    NEXPERIA
    安世
    

    PBSS302NZ
    絲?。?a target="_blank" title="Marking" href="/s302nz/marking.html">S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor
    
1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS302PZ

2. Features and benefits
? Low collector-emitter saturation voltage VCEsat
? High collector current capability IC and ICM
? High collector cur
    文件：271.98 Kbytes 頁(yè)數(shù)：13 Pages
    NEXPERIA
    安世
    

    PBSS302NZ-Q
    絲?。?a target="_blank" title="Marking" href="/s302nz/marking.html">S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor
    
1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.

2. Features and benefits
? Low collector-emitter saturation voltage VCEsat
? High collector current capability IC and ICM
? High collector current gain (hFE) at high IC

    文件：271.57 Kbytes 頁(yè)數(shù)：13 Pages
    NEXPERIA
    安世
    

    PBSS302PZ
    絲?。?a target="_blank" title="Marking" href="/s302pz/marking.html">S302PZ；Package：SC-73；20 V, 5.5 A PNP low VCEsat (BISS) transistor
    
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
    文件：285.71 Kbytes 頁(yè)數(shù)：15 Pages
    NEXPERIA
    安世
    

    PBSS302PZ-Q
    絲印：S302PZ；Package：SOT223；20 V, 5.5 A PNP low VCEsat transistor
    
1. General description
PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBSS302NZ-Q

2. Features and benefits
? Low collector-emitter saturation voltage VCEsat
? High collector current capability IC and ICM
? High collector c
    文件：273.07 Kbytes 頁(yè)數(shù)：14 Pages
    NEXPERIA
    安世
    

    PBSS303NZ
    絲?。?a target="_blank" title="Marking" href="/s303nz/marking.html">S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat (BISS) transistor
    
Features
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
    文件：286.04 Kbytes 頁(yè)數(shù)：15 Pages
    NEXPERIA
    安世
    

    
            
    
		
    
            
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