絲?。?strong>S30；1 A very low dropout fast transient ultra-low noise linear regulator

Description The LD56100 high accuracy voltage regulator provides 1 A of current from an input voltage ranging from 1.8 V to 5.5 V, with a typical dropout voltage of 120 mV. It is available in DFN8 (1.2 x 1.6 mm) package, allowing the maximum space saving. The device is stabilized with a cerami

文件：1.5688 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/s3011te/marking.html">S3011TE；Package：PG-TO252-5；Smart Low-Side Power Switch

Features ? Single channel device ? Digital Feedback ? Current limitation trigger concept ? 3.3 and 5 V compatible logic inputs ? Electrostatic discharge protection (ESD) ? Green Product (RoHS compliant) ? AEC Qualified

文件：2.01443 Mbytes 頁數(shù)：43 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/s3050ej/marking.html">S3050EJ；Package：PG-TDSO8-31；Smart Low-Side Power Switch

Basic Features ? Single channel device ? Very low output leakage current in OFF state ? Electrostatic discharge protection (ESD) ? Embedded protection functions (see below) ? ELV compliant package ? Green Product (RoHS compliant) ? AEC Qualified

文件：1.31322 Mbytes 頁數(shù)：45 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/s301nz/marking.html">S301NZ；Package：SC-73；12 V, 5.8 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.12 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/s301pz/marking.html">S301PZ；Package：SC-73；12 V, 5.7 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.22 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/s302nz/marking.html">S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current capability IC and ICM ? High collector cur

文件：271.98 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/s302nz/marking.html">S302NZ；Package：SC-73；20 V, 5.8 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current capability IC and ICM ? High collector current gain (hFE) at high IC

文件：271.57 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

絲印：S302PZ；Package：SC-73；20 V, 5.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：285.71 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/s302pz/marking.html">S302PZ；Package：SOT223；20 V, 5.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ-Q 2. Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High collector current capability IC and ICM ? High collector c

文件：273.07 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

絲?。?a target="_blank" title="Marking" href="/s303nz/marking.html">S303NZ；Package：SC-73；30 V, 5.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：286.04 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世