8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

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INTERSIL

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -8A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

無錫固電

8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs

文件：128.979 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regu

文件：102.78 Kbytes 頁數(shù)：8 Pages

INTERSIL

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：138.52 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導(dǎo)體

Single Phase 8.0 Amps. Glass Passivated Bridge Rectifiers

文件：227.83 Kbytes 頁數(shù)：2 Pages

TSC

臺灣半導(dǎo)體