-6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features

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INTERSIL

P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS

[G E SOLID STATE]

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isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

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P-Channel Enhancement Mode Power MOSFET

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KERSEMI

P-Channel Enhancement Mode Power MOSFET

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HUILIDAShenzhen hui lida electronic co., LTD

匯利達廣東匯利達半導(dǎo)體有限公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= -6A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.66Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter

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ISC

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