50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) drivi ? 50A, 50V\n? rDS(ON) = 0.022?\n? UIS SOA Rating Curve (Single Pulse)\n? Design Optimized for 5V Gate Drive\n? Can be Driven Directly from CMOS, NMOS, TTL Circuits\n? Compatible with Automotive Drive Requirements\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer C;

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安森美半導(dǎo)體

N 溝道，功率 MOSFET，60V，50A，22mΩ

這些N溝道功率MOSFET使用MegaFET工藝制造。 這種工藝使用接近LSI集成電路的特征尺寸，優(yōu)化了硅原料利用率，可以帶來(lái)出色的性能。 這些器件設(shè)計(jì)用于開(kāi)關(guān)穩(wěn)壓器、開(kāi)關(guān)轉(zhuǎn)換器、電機(jī)驅(qū)動(dòng)和繼電器驅(qū)動(dòng)器等應(yīng)用。 此類晶體管可以直接通過(guò)集成電路運(yùn)行。 以前的開(kāi)發(fā)類型為TA49018。 ?50A, 60V\n?rDS(ON)= 0.022Ω\n?溫度補(bǔ)償式PSPICE?模型\n?峰值電流與脈寬曲線\n?UIS額定值曲線\n?175°C工作溫度;

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安森美半導(dǎo)體

Trans MOSFET N-CH 50V 50A

NJS

包裝：散裝 類別：工具 配件 描述：(RFP) RFP500, PAD, 15\

Brady Corporation