| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：RFM；Package：SMAJ；1500W Transient Voltage Suppression Diodes 文件：1.12743 Mbytes 頁數(shù)：11 Pages | FUTUREWAFER | FUTUREWAFER | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications (Note) The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed i 文件：175 Kbytes 頁數(shù)：4 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in thi 文件：184.69 Kbytes 頁數(shù)：5 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf 文件：1.58274 Mbytes 頁數(shù)：73 Pages | TOSHIBA 東芝 | TOSHIBA | ||
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device 文件：211.91 Kbytes 頁數(shù)：4 Pages | GESS | GESS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：284.22 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEXTCHI |
2447 |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
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4300 |
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25+ |
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50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
NICHIA |
12+ |
3535 |
5680 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
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NICHIA |
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12800 |
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NICHIA |
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NICHIA |
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20000 |
公司只做原裝 品質(zhì)保障 |
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nextchip |
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BGA |
2500 |
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NEXTCHIP |
23+ |
BGA |
3000 |
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詢價 |
相關(guān)芯片絲印
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