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    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

    NVS15B33CA

    絲印:RFM;Package:SMAJ;1500W Transient Voltage Suppression Diodes

    文件:1.12743 Mbytes 頁(yè)數(shù):11 Pages

    FUTUREWAFER

    RFM00U7U

    Bipolar Small-Signal Transistors

    MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

    文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

    TOSHIBA

    東芝

    RFM01U7P

    Bipolar Small-Signal Transistors

    MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

    文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

    TOSHIBA

    東芝

    RFM03U3CT

    Bipolar Small-Signal Transistors

    MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

    文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

    TOSHIBA

    東芝

    RFM03U3CT

    Field Effect Transistor Silicon N Channel MOS Type

    VHF- and UHF-band Amplifier Applications (Note) The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed i

    文件:175 Kbytes 頁(yè)數(shù):4 Pages

    TOSHIBA

    東芝

    RFM04U6P

    Bipolar Small-Signal Transistors

    MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

    文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

    TOSHIBA

    東芝

    RFM07U7X

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

    VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in thi

    文件:184.69 Kbytes 頁(yè)數(shù):5 Pages

    TOSHIBA

    東芝

    RFM08U9X

    Bipolar Small-Signal Transistors

    MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

    文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

    TOSHIBA

    東芝

    RFM10N12

    N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

    N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

    文件:211.91 Kbytes 頁(yè)數(shù):4 Pages

    GESS

    RFM10N12

    isc N-Channel MOSFET Transistor

    FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

    文件:284.22 Kbytes 頁(yè)數(shù):2 Pages

    ISC

    無(wú)錫固電

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