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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          NVS15B33CA

          絲?。?strong>RFM;Package:SMAJ;1500W Transient Voltage Suppression Diodes

          文件:1.12743 Mbytes 頁(yè)數(shù):11 Pages

          FUTUREWAFER

          RFM00U7U

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

          TOSHIBA

          東芝

          RFM01U7P

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

          TOSHIBA

          東芝

          RFM03U3CT

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

          TOSHIBA

          東芝

          RFM03U3CT

          Field Effect Transistor Silicon N Channel MOS Type

          VHF- and UHF-band Amplifier Applications (Note) The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed i

          文件:175 Kbytes 頁(yè)數(shù):4 Pages

          TOSHIBA

          東芝

          RFM04U6P

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

          TOSHIBA

          東芝

          RFM07U7X

          TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

          VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in thi

          文件:184.69 Kbytes 頁(yè)數(shù):5 Pages

          TOSHIBA

          東芝

          RFM08U9X

          Bipolar Small-Signal Transistors

          MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

          文件:1.58274 Mbytes 頁(yè)數(shù):73 Pages

          TOSHIBA

          東芝

          RFM10N12

          N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

          N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

          文件:211.91 Kbytes 頁(yè)數(shù):4 Pages

          GESS

          RFM10N12

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:284.22 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

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          更多RFM供應(yīng)商 更新時(shí)間2026-1-18 15:01:00
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