| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：319.21 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：318.9 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
POWER MOS FIELD EFFECT TRANSISTORS [GESS] N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-p 文件：439.16 Kbytes 頁數(shù)：8 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bip 文件：85.56 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
POWER MOS FIELD EFFECT TRANSISTORS [GESS] N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-p 文件：439.16 Kbytes 頁數(shù)：8 Pages | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 40mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：319.53 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors The RFH45N05 and RFH45N06 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bip 文件：85.56 Kbytes 頁數(shù)：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件：318.92 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND Product Description The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance 文件：906.52 Kbytes 頁數(shù)：11 Pages | RFMD 威訊聯(lián)合 | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND Product Description The RFHA1000 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance 文件：906.52 Kbytes 頁數(shù)：11 Pages | RFMD 威訊聯(lián)合 | RFMD |
技術(shù)參數(shù)
- Minimum Operating Temperature：
-55?C
- Maximum Power Dissipation：
150000mW
- Maximum Operating Temperature：
150?C
- Maximum Gate Source Voltage：
?20V
- Maximum Drain Source Voltage：
180V
- Maximum Continuous Drain Current：
25A
- Material：
Si
- Configuration：
Single
- Channel Type：
N
- Channel Mode：
Enhancement
- Category：
Power MOSFET
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
哈里斯 |
05+ |
TO-247 |
2000 |
原裝進口 |
詢價 | ||
RCA |
24+ |
500 |
詢價 | ||||
HARRIS |
92+ |
TO220/ |
2450 |
全新原裝進口自己庫存優(yōu)勢 |
詢價 | ||
MICROCHIP |
17+ |
sopdip |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
HARRIS |
17+ |
TO220/ |
9988 |
只做原裝進口,自己庫存 |
詢價 | ||
ALCATEL |
25+ |
QFP-48 |
2987 |
只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電! |
詢價 | ||
TEConnectivity |
新 |
5 |
全新原裝 貨期兩周 |
詢價 | |||
RFMD |
24+ |
SMD |
5500 |
長期供應(yīng)原裝現(xiàn)貨實單可談 |
詢價 | ||
QORVO |
18+ |
SMD |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
SCHRACK |
2026+ |
SMD |
19 |
原廠原裝倉庫現(xiàn)貨,歡迎咨詢 |
詢價 |
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