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          首頁 >RFH>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          RFH

          Standard 4-Pin DIP Package Enable Function

          Features Standard 4-Pin DIP Package Enable Function Typical Applications Telecommunication Universal Clock

          文件:35.49 Kbytes 頁數:3 Pages

          VECTRON

          RFH10N45

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.41 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          RFH10N45

          10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

          These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

          文件:32.63 Kbytes 頁數:4 Pages

          INTERSIL

          RFH10N50

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.18 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          RFH10N50

          10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

          These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

          文件:32.63 Kbytes 頁數:4 Pages

          INTERSIL

          RFH12N35

          12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs

          These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These

          文件:40.37 Kbytes 頁數:5 Pages

          INTERSIL

          RFH12N35

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 350V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.25 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          RFH12N40

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.38Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.42 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          RFH12N40

          12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs

          These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. These

          文件:40.37 Kbytes 頁數:5 Pages

          INTERSIL

          RFH25N18

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 180V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.32 Kbytes 頁數:2 Pages

          ISC

          無錫固電

          技術參數

          • Minimum Operating Temperature:

            -55?C

          • Maximum Power Dissipation:

            150000mW

          • Maximum Operating Temperature:

            150?C

          • Maximum Gate Source Voltage:

            ?20V

          • Maximum Drain Source Voltage:

            180V

          • Maximum Continuous Drain Current:

            25A

          • Material:

            Si

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應商型號品牌批號封裝庫存備注價格
          哈里斯
          05+
          TO-247
          2000
          原裝進口
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          RCA
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          92+
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          17+
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          25+
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          2987
          只售原裝自家現貨!誠信經營!歡迎來電!
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          TEConnectivity
          5
          全新原裝 貨期兩周
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          RFMD
          24+
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          5500
          長期供應原裝現貨實單可談
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          18+
          SMD
          85600
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          SCHRACK
          2026+
          SMD
          19
          原廠原裝倉庫現貨,歡迎咨詢
          詢價
          更多RFH供應商 更新時間2026-1-21 16:07:00
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