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          首頁 >RFH>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          RFH25N20

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.08 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          RFH25P08

          isc P-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= -25A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:320.09 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          RFH25P08

          -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

          Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

          文件:33.2 Kbytes 頁數(shù):4 Pages

          INTERSIL

          RFH25P08

          -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

          Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

          文件:91.48 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          RFH25P10

          -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

          Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

          文件:91.48 Kbytes 頁數(shù):2 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導體新澤西半導體公司

          RFH25P10

          -25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs

          Description These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

          文件:33.2 Kbytes 頁數(shù):4 Pages

          INTERSIL

          RFH25P10

          isc P-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= -25A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.84 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          RFH30N12

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.62 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          RFH30N15

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 30A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 75mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.63 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          RFH35N08

          isc N-Channel MOSFET Transistor

          FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

          文件:319.42 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          技術參數(shù)

          • Minimum Operating Temperature:

            -55?C

          • Maximum Power Dissipation:

            150000mW

          • Maximum Operating Temperature:

            150?C

          • Maximum Gate Source Voltage:

            ?20V

          • Maximum Drain Source Voltage:

            180V

          • Maximum Continuous Drain Current:

            25A

          • Material:

            Si

          • Configuration:

            Single

          • Channel Type:

            N

          • Channel Mode:

            Enhancement

          • Category:

            Power MOSFET

          供應商型號品牌批號封裝庫存備注價格
          哈里斯
          05+
          TO-247
          2000
          原裝進口
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          RCA
          24+
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          92+
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          17+
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          17+
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          9988
          只做原裝進口,自己庫存
          詢價
          ALCATEL
          25+
          QFP-48
          2987
          只售原裝自家現(xiàn)貨!誠信經(jīng)營!歡迎來電!
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          TEConnectivity
          5
          全新原裝 貨期兩周
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          24+
          SMD
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          長期供應原裝現(xiàn)貨實單可談
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          18+
          SMD
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          保證進口原裝可開17%增值稅發(fā)票
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          SCHRACK
          2026+
          SMD
          19
          原廠原裝倉庫現(xiàn)貨,歡迎咨詢
          詢價
          更多RFH供應商 更新時間2026-1-21 16:07:00
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