PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX4N40E is supplied

文件：72.03 Kbytes 頁數(shù)：8 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.7A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.8Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：318.76 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistors Avalanche energy rated

恩XP

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. These

文件：38.53 Kbytes 頁數(shù)：4 Pages

INTERSIL

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：261.91 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. These

文件：38.53 Kbytes 頁數(shù)：4 Pages

INTERSIL