isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 400V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.0Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.72 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistors Avalanche energy rated

文件：61 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

PowerMOS transistors Avalanche energy rated

恩XP

7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：47.43 Kbytes 頁(yè)數(shù)：4 Pages

INTERSIL

7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

文件：47.43 Kbytes 頁(yè)數(shù)：4 Pages

INTERSIL

Dual N-Channel PowerTrench MOSFET

Features Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A Low Inductance Packaging Shortens Rise/Fall Times Lower Switching Losses 100% Rg Tested Termination is Lead-free and RoHS Compliant

文件：288.14 Kbytes 頁(yè)數(shù)：9 Pages

RECTRON

麗正國(guó)際