PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. FEATURES ? Repet

文件：75.85 Kbytes 頁數(shù)：8 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.4A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：319.37 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION\nN-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications.FEATURES\n? Repetitive Avalan ? Repetitive Avalanche Rated\n? Fast switching\n? Stable off-state characteristics\n? High thermal cycling performance\n? Isolated package?;

恩XP

600V N-Channel Enhancement Mode MOSFET

文件：225.38 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

600V N-Channel Enhancement Mode MOSFET

文件：225.38 Kbytes 頁數(shù)：5 Pages

PANJIT

強茂

N-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES ? Low Crss ? Low gate charge ? Fast switching ? Improved ESD capability ? Improved dv/dt capability ? 100% avalanche energy test

文件：1.9839 Mbytes 頁數(shù)：11 Pages

RECTRON

麗正國際