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          首頁 >PHT>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PHT6N06LT

          TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general

          文件:67.61 Kbytes 頁數(shù):9 Pages

          PHI

          PHI

          PHI

          PHT6N06LT

          N-Channel 60-V (D-S) MOSFET

          FEATURES ? Halogen-free ? TrenchFET? Power MOSFET APPLICATIONS ? Load Switches for Portable Devices

          文件:1.06176 Mbytes 頁數(shù):8 Pages

          VBSEMI

          微碧半導體

          PHT6N06LT

          TrenchMOS? transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and

          文件:173.64 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          PHT6N06T

          TrenchMOS? standard level FET

          1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHT6N06T in SOT223. 1.2 Features 1.3 Applications n Low on-state resistance n Low QGD n Fast switching n Surface mounting package. n DC to DC converte

          文件:345.7 Kbytes 頁數(shù):13 Pages

          NEXPERIA

          安世

          PHT6N06T

          TrenchMOS transistor Standard level FET

          Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHT6N06T in SOT223.

          文件:71.29 Kbytes 頁數(shù):10 Pages

          PHI

          PHI

          PHI

          PHT6NQ10T

          N-channel TrenchMOS? transistor

          FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- ? Motor and relay drivers ? d.c. to d.c. converter

          文件:198.22 Kbytes 頁數(shù):8 Pages

          NEXPERIA

          安世

          PHT6NQ10T

          N-channel TrenchMOS transistor

          GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. FEATURES ? ’Trench’ technology ? Low on-state resistance ? Fast switching ? Low thermal resistance Applications:- ? Motor and relay drivers ? d.c. to d.c. converters

          文件:78.55 Kbytes 頁數(shù):7 Pages

          PHI

          PHI

          PHI

          PHT8N06

          TrenchMOS transistor Standard level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC

          文件:72.26 Kbytes 頁數(shù):10 Pages

          PHI

          PHI

          PHI

          PHT8N06LT

          TrenchMOS transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and genera

          文件:64.11 Kbytes 頁數(shù):9 Pages

          PHI

          PHI

          PHI

          PHT8N06LT

          TrenchMOS? transistor Logic level FET

          GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and

          文件:171.36 Kbytes 頁數(shù):10 Pages

          NEXPERIA

          安世

          技術參數(shù)

          • 總PIN位數(shù):

            2

          • 排數(shù):

            1

          • 圓針/方針:

            方針

          • 額定電流:

            4.8A

          • 配合針長度:

            5.84mm

          • 塑高:

            2.54mm

          • 端接針長度:

            3.1mm

          • 觸頭材質:

            磷青銅

          • 觸頭鍍層:

          • 工作溫度范圍:

            -55℃~+125℃

          • 顏色:

            黑色

          供應商型號品牌批號封裝庫存備注價格
          恩XP
          25+
          SSOP28
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          NIEC
          23+
          模塊
          595
          全新原裝正品,量大可訂貨!可開17%增值票!價格優(yōu)勢!
          詢價
          24+
          模塊
          135
          詢價
          DISCRETE
          4000
          PH3
          20000
          詢價
          MAXIM
          23+
          SOT23-5
          5000
          原裝正品,假一罰十
          詢價
          PHI
          25+
          SOT223
          10
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          PHI
          17+
          SOT-223
          6200
          詢價
          恩XP
          16+
          NA
          8800
          誠信經營
          詢價
          恩XP
          2016+
          SOT-223
          3500
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
          詢價
          恩XP
          1415+
          SOT-223
          28500
          全新原裝正品,優(yōu)勢熱賣
          詢價
          更多PHT供應商 更新時間2026-1-19 17:28:00
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