N-channel TrenchMOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHT2NQ10T in SOT223 Features ■ TrenchMOS? technology ■ Fast switching ■ Surface mount package. Applications ■ Primary side switch in DC to DC

文件：268.7 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Product availability: PHT4NQ10LT in SOT223. Features ■ TrenchMOS? technology ■ Fast switching ■ Low on-state resistance ■ Surface mount package ■ Logic level compatible.

文件：347.09 Kbytes 頁數(shù)：13 Pages

PHI

PHI

N-Channel 100-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFETs ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC

文件：977.42 Kbytes 頁數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

絲印：4NQ10L；Package：SOT223；N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications. 1.2 Features and benefits ? Low cond

文件：440.58 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世

TrenchMOS? standard level FET

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHT4NQ10T in SOT223. 2. Features n TrenchMOS? technology n Very fast switching n Surface mount package. 3. Applications n Primary side switch in DC to

文件：393.85 Kbytes 頁數(shù)：13 Pages

NEXPERIA

安世

N-Channel 100-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFETs ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC

文件：977.41 Kbytes 頁數(shù)：6 Pages

VBSEMI

微碧半導(dǎo)體

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Features ■ TrenchMOS? technology ■ Very fast switching ■ Surface mount package. Applications ■ Primary side switch in DC to DC converters ■ High speed line driver ■ Fast gener

文件：351.57 Kbytes 頁數(shù)：13 Pages

PHI

PHI

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHT6N03LT is supplied in the SOT223 surfa

文件：53.16 Kbytes 頁數(shù)：6 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology, the device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intende

文件：70.3 Kbytes 頁數(shù)：10 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHT6N06T in SOT223.

文件：71.29 Kbytes 頁數(shù)：10 Pages

PHI

PHI