TrenchMOS logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP71NQ03LT in SOT78 (TO-220AB) PHB71NQ03LT in SOT404 (D2-PAK) PHD71NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate cha

文件：265.02 Kbytes 頁數(shù)：14 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.49 Kbytes 頁數(shù)：2 Pages

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無錫固電

MOSFET N-CH 30V 75A TO220AB

恩XP

TrenchMOS logic level FET

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: PHP71NQ03LT in SOT78 (TO-220AB) PHB71NQ03LT in SOT404 (D2-PAK) PHD71NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate cha

文件：265.02 Kbytes 頁數(shù)：14 Pages

PHI

PHI

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：344.51 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-channel TrenchMOS logic level FET

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Simp

文件：775.19 Kbytes 頁數(shù)：13 Pages

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