HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 頁數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

Description The PD85015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85015-E boasts the excell

文件：251.86 Kbytes 頁數(shù)：13 Pages

STMICROELECTRONICS

意法半導(dǎo)體

15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package

The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, lin ? Excellent thermal stability\n? Common source configuration\n? POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V? Plastic package\n? ESD protection\n? In compliance with the 2002/95/EC European directive;

ST

意法半導(dǎo)體

TRANS RF N-CH FET POWERSO-10RF

ST

意法半導(dǎo)體

射頻金屬氧化物半導(dǎo)體場效應(yīng)(RF MOSFET)晶體管 POWER R.F. N-Ch Trans

ST

意法半導(dǎo)體

Package：PowerSO-10 裸露底部焊盤；包裝：托盤 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：IC RF PWR TRANSISTOR PWRSO-10RF

STMICROELECTRONICS

意法半導(dǎo)體

Package：PowerSO-10RF 裸露底部焊盤（2 條直引線）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：TRANS RF N-CH FET POWERSO-10RF

STMICROELECTRONICS

意法半導(dǎo)體