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          首頁 >PD57>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          PD57045TR-E

          RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent

          文件:490.84 Kbytes 頁數(shù):20 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060

          RF POWER TRANSISTORS The LdmoST Plastic FAMILY

          DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

          文件:305.82 Kbytes 頁數(shù):12 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060-E

          RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

          文件:488.78 Kbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060-E

          RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

          文件:520.53 Kbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060S

          RF POWER TRANSISTORS The LdmoST Plastic FAMILY

          DESCRIPTION The PD57060S is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. PD57060S boasts the excellent

          文件:305.82 Kbytes 頁數(shù):12 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060S

          HF to 2000 MHz Class AB Common Source - PowerSO-10RF

          HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

          文件:288.66 Kbytes 頁數(shù):5 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          PD57060S-E

          RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

          文件:520.53 Kbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060S-E

          RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

          文件:488.78 Kbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060STR-E

          RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

          文件:520.53 Kbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          PD57060STR-E

          RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

          Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain,

          文件:488.78 Kbytes 頁數(shù):21 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          技術(shù)參數(shù)

          • Package:

            PowerSO-10RF (formed lead)

          • Marketing Status:

            NRND

          • Grade:

            Industrial

          • Frequency_nom(MHz):

            945

          • Output Power_nom(W):

            6

          • Power Gain_nom(dB):

            15

          • Transistor Supply Voltage_nom(V):

            28

          • Efficiency_nom(%):

            55

          • R_th(J-C)_max:

            5

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          更多PD57供應(yīng)商 更新時(shí)間2026-1-19 15:15:00
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