| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：560.6 Kbytes 頁(yè)數(shù)：28 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 頁(yè)數(shù)：5 Pages | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent ga 文件：388.45 Kbytes 頁(yè)數(shù)：18 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 頁(yè)數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
HF to 2000 MHz Class AB Common Source - PowerSO-10RF HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to 文件：288.66 Kbytes 頁(yè)數(shù)：5 Pages | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 頁(yè)數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS | ||
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent 文件：490.84 Kbytes 頁(yè)數(shù)：20 Pages | STMICROELECTRONICS 意法半導(dǎo)體 | STMICROELECTRONICS |
技術(shù)參數(shù)
- Package：
PowerSO-10RF (formed lead)
- Marketing Status：
NRND
- Grade：
Industrial
- Frequency_nom(MHz)：
945
- Output Power_nom(W)：
6
- Power Gain_nom(dB)：
15
- Transistor Supply Voltage_nom(V)：
28
- Efficiency_nom(%)：
55
- R_th(J-C)_max：
5
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ST |
10+ |
5000 |
原裝現(xiàn)貨價(jià)格有優(yōu)勢(shì)量多可發(fā)貨 |
詢(xún)價(jià) | |||
PIONEER |
25+ |
TSSOP |
18000 |
原廠(chǎng)直接發(fā)貨進(jìn)口原裝 |
詢(xún)價(jià) | ||
SGS |
24+ |
107 |
詢(xún)價(jià) | ||||
PIONEER |
23+ |
DIP |
5000 |
原裝正品,假一罰十 |
詢(xún)價(jià) | ||
ST |
24+ |
TO-270 |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢(xún)價(jià) | ||
ST |
1645+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢(xún)價(jià) | ||
STMicroelectronics |
24+ |
NA |
3000 |
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng) |
詢(xún)價(jià) | ||
ANY |
新 |
30 |
全新原裝 貨期兩周 |
詢(xún)價(jià) | |||
STMICROEL |
24+ |
SMD |
5500 |
長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談 |
詢(xún)價(jià) | ||
ST |
23+ |
原廠(chǎng)封裝 |
13528 |
振宏微原裝正品,假一罰百 |
詢(xún)價(jià) |
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