絲?。?strong>P1；Package：SOT-323；General Purpose Transistor

General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC?70 package which is designed for low power surface mount applications. Features ? We declare that the material of product compliance with RoHS requ

文件：331.91 Kbytes 頁數(shù)：3 Pages

FS

絲?。?strong>p1；Package：SOT1116；Low-power dual buffer/line driver; 3-state

1. General description The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level at pin 2OE causes o

文件：309.77 Kbytes 頁數(shù)：21 Pages

NEXPERIA

安世

絲印：p1；Package：SOT1203；Low-power dual buffer/line driver; 3-state

1. General description The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level at pin 2OE causes o

文件：309.77 Kbytes 頁數(shù)：21 Pages

NEXPERIA

安世

絲?。?strong>P1；Package：SOT-343R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

絲?。?strong>P1；Package：SOT-343R；UHF power transistor

DESCRIPTION NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. FEATURES ? High power gain ? High efficiency ? 1.9 GHz operating area ? Linear and non-linear operation. APP

文件：116.31 Kbytes 頁數(shù)：12 Pages

PHI

PHI

絲?。?strong>P1；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Power dissipation

文件：1.43793 Mbytes 頁數(shù)：3 Pages

DGNJDZ

南晶電子

絲印：P1；Package：SOT-89；PNP Transistors

■ Features ● Collector Current Capability IC=-1A ● Collector Emitter Voltage VCEO=-60V

文件：413.83 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

絲?。?strong>P1；Package：SOT-89；PNP Silicon Planar Medium Power High Perormance Transistor

FEATURES ● Complementary type:FCX491.

文件：137.49 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

絲印：P1；Package：SMD5；Switching diode

FEATURES 1) A WIDE VARIETY OF CONFIGURATIONS ARE AVAILABLE. (UMD5, UMD6, SMD5, SMD6) 2) MULTIPLE DIODES IN ONE SMALL SURFACE MOUNT PACKAGE. 3) DIODE CHARACTERISTICS ARE MATCHED IN THE PACKAGE. Applications Ultra high speed switching

文件：83.1 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆

絲?。?strong>P1；Package：SMD5；Switching diode

Features High reliability Small mold type High Speed switching Application High speed switching

文件：174.91 Kbytes 頁數(shù)：3 Pages

ROHM

羅姆