| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?strong>P10N60CA；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.74 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
絲印：P10N60CA；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.72 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
絲印：P10N60CA；Package：TO-220FJH-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.71 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/p10n60cafj/marking.html">P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.74 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/p10n60cafj/marking.html">P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.75 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
絲印：P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.72 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
絲?。?a target="_blank" title="Marking" href="/p10n60cafj/marking.html">P10N60CAFJ；Package：TO-220FJ-3L；10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.71 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | ||
P10N60CA | 10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.71 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN | |
10A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP10N60CAFJ/FJH is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistan 文件：291.72 Kbytes 頁(yè)數(shù)：8 Pages | SILAN 士蘭微 | SILAN |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
士蘭微 |
24+ |
10000 |
原裝現(xiàn)貨 |
詢價(jià) | |||
SILAN/士蘭微 |
25+ |
TO-220F |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
M-SYSTEM |
DIP-8 |
35560 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨 |
詢價(jià) | |||
SILAN |
23+ |
QFN |
4950 |
原裝 |
詢價(jià) | ||
SILAN/士蘭微 |
22+ |
QFN |
100 |
上傳都是百分之百進(jìn)口原裝現(xiàn)貨 |
詢價(jià) | ||
SILAN/士蘭微 |
24+ |
PDFN5*6 |
35000 |
專營(yíng)SILAN士蘭微原裝保障 |
詢價(jià) | ||
SILAN/士蘭微 |
25+ |
PDFN5*6-8L |
188600 |
全新原廠原裝正品現(xiàn)貨 歡迎咨詢 |
詢價(jià) | ||
24+ |
N/A |
70000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
SILAN(士蘭微電子) |
25+ |
TO-252 |
500000 |
源自原廠成本,高價(jià)回收工廠呆滯 |
詢價(jià) | ||
杭州士蘭 |
兩年內(nèi) |
NA |
24317 |
實(shí)單價(jià)格可談 |
詢價(jià) |
相關(guān)芯片絲印
更多- SVFP10N60CAFJ
- SVFP10N60CAFJ
- TMP10N65H
- STP10NK60ZFP
- STP10NK70ZFP
- STP10NK80Z
- STP10NK80ZFP
- P10V50SP
- UMP11N
- IMP11
- DTB713ZM
- EMP11
- EMP11
- DTB713ZE
- DDTA143ZE-7-F
- P1100EAL
- P1100EB
- P1100EB
- P1100ECL
- P1100SA
- P1100SA
- P1100TA
- P1100SA
- P1100SB
- P1100SB
- P1100TB
- P1100SB
- P1100SC
- P1100SC
- P1100SC
- P1100LA
- P1100LC
- SVSP11N65FD2
- SVSP11N65KD2
- SVSP11N65SD2TR
- STP11NM80
- LP1216DT2AG
- MIC2016-1.2YML-TR
- DDTA114TCA-7-F
- DDA114TH-7
- ZXMP2120E5
- RQ3P120BKFRA
- P120KCF
- PL123-05SC
- PL123-05SI
相關(guān)庫(kù)存
更多- SVFP10N60CAFJ
- SVFP10N60CAFJ
- STP10NK60Z
- STP10NK70Z
- STP10NK80Z
- STP10NK80ZFP
- P10V45SP
- P10V60SP
- IMP11
- EMP11
- DTB713ZE
- DTB713ZM
- DTB713ZE
- DTB713ZM
- P1100EA
- P1100EA
- P1100EBL
- P1100EC
- P1100EC
- P1100SALRP
- P1100TA
- P1100SA
- P1100TA
- P1100SBLRP
- P1100SB
- P1100SB
- P1100SB
- P1100SCLRP
- P1100SC
- P1100SD
- P1100LB
- SVSP11N65DD2TR
- SVSP11N65FJDD2
- SVSP11N65SD2
- SVSP11N65TD2
- NCP12711ADNR2G
- LPB2333LT1G
- DDTA114TUA-7-F
- DDTA114TE-7-F
- ZXMP2120E5
- PTPLD1202Q1DYYQ1
- P120JCF
- PTUSB1210BRHBR
- PL123-05SC-R
- PL123-05SI-R
