4096-Bit EEPROM

[ITT Semiconductors] Introduction Electrically erasable programmable read-only memory (EEPROM) in N-channel floating-gate technology with a capacity of 512 words, 8 bits each. The NVM 3060 is intended for use as a reprogrammable non-volatile memory in conjunction with the CCU 2030/2050/2070/300

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4096-Bit EEPROM

Introduction\nElectrically erasable programmable read-only memory (EEPROM) in N-channel floating-gate technology with a capacity of 512 words, 8 bits each.\nThe NVM 3060 is intended for use as a reprogrammable non-volatile memory in conjunction with the CCU 2030/2050/2070/3000 series Central Control

TDK-Micronas

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intend

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PHI

PHI

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR30100WT series is supplied in the conventional leaded SOT429 (TO247) package. FEATURES ? Low forward volt drop ? Fast

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PHI

PHI

24-BIT, 96/192-kHz ASYNCHRONOUS STEREO AUDIO CODEC

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BURR-BROWN